P . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL RY A N I MITSUBISHI Pch POWER MOSFET FX30KMJ-3 HIGH-SPEED SWITCHING USE FX30KMJ-3 OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.7.
25°C)
Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V
Conditions
Ratings
–150 ±20
–30
–120
–30
–30
–120 35
–55 ~ +150
–55 ~ +150 2000 2.0
4.5 ± 0.2
Unit V V A A A A A W °C °C V g Jan.1999
Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight
AC for 1minute, Terminal to case Typical value
P
. . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som
IM REL
RY A N I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FX30KMJ-03 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
2 | FX30KMJ-06 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
3 | FX30KMJ-2 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
4 | FX300 |
CML |
Selective Call Tone Decoders | |
5 | FX304 |
ETC |
C-NET AUDIO PROCESSOR | |
6 | FX30ASJ-03 |
Renesas |
Pch Power MOS FET | |
7 | FX30ASJ-03 |
Mitsubishi Electric Semiconductor |
Pch POWER MOSFET | |
8 | FX30SMJ-3 |
Renesas |
Pch Power MOS FET | |
9 | FX30SMJ-3 |
Mitsubishi Electric Semiconductor |
Pch POWER MOSFET | |
10 | FX315 |
Consumer Microcircuits Limited |
CTCSS Encoder | |
11 | FX365 |
Consumer Microcircuits Limited |
CTCSS Encoder/Decoder | |
12 | FX3ASJ-3 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |