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FX30ASJ-03 - Renesas

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FX30ASJ-03 Pch Power MOS FET

FX30ASJ-03 High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 61 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 4 12 3 1 3 2, 4 REJ03G1445-0200 (Previous: MEJ02G0266-0101) Rev.2.00 Aug 07, 2006 1. Gate 2. Drain 3. Sou.

Features


• Drive voltage : 4 V
• VDSS :
  –30 V
• rDS(ON) (max) : 61 mΩ
• ID :
  –30 A
• Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 4 12 3 1 3 2, 4 REJ03G1445-0200 (Previous: MEJ02G0266-0101) Rev.2.00 Aug 07, 2006 1. Gate 2. Drain 3. Source 4. Drain Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Chan.

The same part from a different manufacturer

Datasheet FX30ASJ-03 - Mitsubishi Electric Semiconductor FX30ASJ-03

PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change. FX30ASJ-03 MITSUBISHI Pch POW.

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