FX30ASJ-03 High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 61 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 4 12 3 1 3 2, 4 REJ03G1445-0200 (Previous: MEJ02G0266-0101) Rev.2.00 Aug 07, 2006 1. Gate 2. Drain 3. Sou.
• Drive voltage : 4 V
• VDSS :
–30 V
• rDS(ON) (max) : 61 mΩ
• ID :
–30 A
• Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A)
4
12 3
1
3 2, 4
REJ03G1445-0200 (Previous: MEJ02G0266-0101)
Rev.2.00 Aug 07, 2006
1. Gate 2. Drain 3. Source 4. Drain
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Chan.
PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change. FX30ASJ-03 MITSUBISHI Pch POW.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FX300 |
CML |
Selective Call Tone Decoders | |
2 | FX304 |
ETC |
C-NET AUDIO PROCESSOR | |
3 | FX30KMJ-03 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
4 | FX30KMJ-06 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
5 | FX30KMJ-2 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
6 | FX30KMJ-3 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
7 | FX30SMJ-3 |
Renesas |
Pch Power MOS FET | |
8 | FX30SMJ-3 |
Mitsubishi Electric Semiconductor |
Pch POWER MOSFET | |
9 | FX315 |
Consumer Microcircuits Limited |
CTCSS Encoder | |
10 | FX365 |
Consumer Microcircuits Limited |
CTCSS Encoder/Decoder | |
11 | FX3ASJ-3 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
12 | FX3U |
Mitsubishi |
Programmable Logic Controllers Beginners Manual |