MITSUBISHI Nch POWER MOSFET FS50UMJ-06 HIGH-SPEED SWITCHING USE FS50UMJ-06 OUTLINE DRAWING 10.5MAX. r Dimensions in mm 4.5 1.3 3.2 16 12.5MIN. 3.8MAX. 1.0 7.0 f 3.6 0.8 D 0.5 2.6 2.54 2.54 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡4V DRIVE ¡VDSS ...... 60V ¡rDS (ON).
value VGS = 0V VDS = 0V
Conditions
Ratings 60 ± 20 50 200 50 50 200 70
–55 ~ +150
–55 ~ +150 2.0
4.5MAX.
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
MITSUBISHI Nch POWER MOSFET
FS50UMJ-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 60V, VGS = 0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FS50UMJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
2 | FS50UMJ-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
3 | FS50UMJ-3 |
Mitsubishi |
Nch POWER MOSFET | |
4 | FS50UM-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
5 | FS50UM-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
6 | FS50UM-3 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
7 | FS50UM-3 |
INCHANGE |
N-Channel MOSFET | |
8 | FS50 |
Feeling Technology |
LINEAR HALL-EFFECT SENSORS | |
9 | FS500R17OE4D |
Infineon |
IGBT | |
10 | FS500R17OE4DP |
Infineon |
IGBT | |
11 | FS50AS-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
12 | FS50ASJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |