FS50UM-3 - Mitsubishi Electric Semiconductor

FS50UM-3 Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET FS50UM-3 HIGH-SPEED SWITCHING USE FS50UM-3 OUTLINE DRAWING 10.5MAX. r Dimensions in mm 4.5 1.3 3.2 16 12.5MIN. 3.8MAX. 1.0 7.0 f 3.6 0.8 D 0.5 2.6 2.54 2.54 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡10V DRIVE ¡VDSS ..... 150V ¡rDS (ON) (.

Features

cal value VGS = 0V VDS = 0V Conditions Ratings 150 ±20 50 200 50 50 200 125
  –55 ~ +150
  –55 ~ +150 2.0 4.5MAX. Unit V V A A A A A W °C °C g Feb.1999 L = 100µH MITSUBISHI Nch POWER MOSFET FS50UM-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 150V, V GS = 0V ID .