FS50SMJ-2 - Mitsubishi Electric Semiconductor

FS50SMJ-2 Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET FS50SM-3 HIGH-SPEED SWITCHING USE FS50SM-3 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 f 3.2 2 2 4 20.0 19.5MIN. 4.4 G 0.6 2.8 1.0 q 5.45 w e 5.45 4 wr ¡10V DRIVE ¡VDSS ..... 150V ¡rDS (ON) (MAX) ......

Features

VGS = 0V VDS = 0V Conditions Ratings 150 ±20 50 200 50 50 200 150
  –55 ~ +150
  –55 ~ +150 4.8 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH MITSUBISHI Nch POWER MOSFET FS50SM-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 150V, V GS = 0V ID = 1mA, VDS = 10V I.