MITSUBISHI Nch POWER MOSFET FS50KM-06 HIGH-SPEED SWITCHING USE FS50KM-06 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 1 2 3 2.6 ± 0.2 ¡10V DRIVE ¡VDSS .....
current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100µH VGS = 0V VDS = 0V
Conditions
Ratings 60 ±20 50 200 50 50 200 30
–55 ~ +150
Unit V V A A A A A W °C °C V g
Feb.1999
AC for 1minute, Terminal to case Typical value
–55 ~ +150 2000 2.0
MITSUBISHI Nch POWER MOSFET
FS50KM-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) .
FS50SM-2-VB FS50SM-2-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FS50SM-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
2 | FS50SM-3 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
3 | FS50SM-5A |
Renesas Technology |
N-channel MOSFET | |
4 | FS50SMJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
5 | FS50SMJ-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
6 | FS50SMJ-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
7 | FS50SMJ-3 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
8 | FS50 |
Feeling Technology |
LINEAR HALL-EFFECT SENSORS | |
9 | FS500R17OE4D |
Infineon |
IGBT | |
10 | FS500R17OE4DP |
Infineon |
IGBT | |
11 | FS50AS-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
12 | FS50ASJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET |