FS20VSJ-3 - Renesas Technology

FS20VSJ-3 Pch Power MOSFET

FX20VSJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G0273-0100 Rev.1.00 Aug.20.2004 Features • Drive voltage : 4 V • VDSS : – 150 V www.DataSheet4U.com • rDS(ON) (max) : 0.29 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Outline TO-220S 3 4 1 1 2 3 1. 2. 3. 4. Gate Drain Source Drain 2, 4 Applications Mot.

Features

• Drive voltage : 4 V
• VDSS :
  – 150 V www.DataSheet4U.com
• rDS(ON) (max) : 0.29 Ω
• ID :
  – 20 A
• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Outline TO-220S 3 4 1 1 2 3 1. 2. 3. 4. Gate Drain Source Drain 2, 4 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID.