FS20VS-5 - Mitsubishi Electric Semiconductor

FS20VS-5 Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET FS3VS-9 HIGH-SPEED SWITCHING USE FS3VS-9 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 +0.3 –0 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 q ¡VDSS ..... 450V ¡rDS (ON) (MAX) ..........

Features

V V A A W °C °C g Feb.1999 Typical value (1.5) MITSUBISHI Nch POWER MOSFET FS3VS-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 450 ±30 — — 2 — — 1.0 — — — — — — — — — Typ. — — — — 3 2.7 2.7 1.5 300 35 6 13 10 30 30 1.5.