·7A, 250V, RDS(on) = 0.7Ω ·Second Generation Rad Hard MOSFET Results From New Design Concepts APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. ABSOLUT.
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FRM234
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 4A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 250V; VGS= 0
VSD Diode Forward Voltage
IF= 7A; VGS= 0
MIN MAX UNIT
250 V
2.0 4 0.7
V Ω
100 nA
1 mA
1.8 V
isc website:www.iscsemi.cn
2 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FRM230 |
INCHANGE |
N-Channel MOSFET | |
2 | FRM230D |
Intersil |
N-Channel Power MOSFET | |
3 | FRM230H |
Intersil |
N-Channel Power MOSFET | |
4 | FRM230R |
Intersil |
N-Channel Power MOSFET | |
5 | FRM234D |
Intersil |
N-Channel Power MOSFET | |
6 | FRM234H |
Intersil |
N-Channel Power MOSFET | |
7 | FRM234R |
Intersil |
N-Channel Power MOSFET | |
8 | FRM240 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | FRM240D |
Intersil |
N-Channel Power MOSFET | |
10 | FRM240H |
Intersil |
N-Channel Power MOSFET | |
11 | FRM240R |
Intersil |
N-Channel Power MOSFET | |
12 | FRM244D |
Intersil |
N-Channel Power MOSFET |