FRM234 |
Part Number | FRM234 |
Manufacturer | Inchange Semiconductor |
Description | ·7A, 250V, RDS(on) = 0.7Ω ·Second Generation Rad Hard MOSFET Results From New Design Concepts APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total do... |
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FRM234
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 4A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 250V; VGS= 0 VSD Diode Forward Voltage IF= 7A; VGS= 0 MIN MAX UNIT 250 V 2.0 4 0.7 V Ω 100 nA 1 mA 1.8 V isc website:www.iscsemi.cn 2 ... |
Document |
FRM234 Data Sheet
PDF 43.28KB |
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