This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power suppli.
• 4.0 A, 500 V, RDS(on) = 1.4 Ω @VGS = 10 V
• Low Gate Charge (Typ. 18 nC)
• Low Crss (Typ. 15 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic la.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQU5N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
2 | FQU5N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
3 | FQU5N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
4 | FQU5N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | FQU5N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
6 | FQU5N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
7 | FQU5N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
8 | FQU5N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
9 | FQU5N60C |
ON Semiconductor |
N-Channel MOSFET | |
10 | FQU5P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET | |
11 | FQU5P20 |
Fairchild Semiconductor |
200V P-Channel MOSFET | |
12 | FQU10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |