These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
• 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
D
D
!
D-PAK
G S FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Av.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQU5N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
2 | FQU5N50CTU-WS |
ON Semiconductor |
N-Channel MOSFET | |
3 | FQU5N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
4 | FQU5N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | FQU5N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
6 | FQU5N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
7 | FQU5N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
8 | FQU5N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
9 | FQU5N60C |
ON Semiconductor |
N-Channel MOSFET | |
10 | FQU5P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET | |
11 | FQU5P20 |
Fairchild Semiconductor |
200V P-Channel MOSFET | |
12 | FQU10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |