This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power suppli.
• 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 3.5 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ball.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and .
1.3A, 600V, N H FQU1N60C FQD1N60C H1N60U H1N60D 1N60 HAOHAI U: TO-251 D: TO-252 1N60 Series N-Channel MOS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQU1N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
2 | FQU1N60 |
OuCan |
1.3A N-Channel MOSFET | |
3 | FQU1N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
4 | FQU1N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
5 | FQU1N50B |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
6 | FQU1N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
7 | FQU10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
8 | FQU10N20 |
INCHANGE |
N-Channel MOSFET | |
9 | FQU10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
10 | FQU10N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
11 | FQU11P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
12 | FQU12N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |