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FQU1N60C - ON Semiconductor

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FQU1N60C N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power suppli.

Features


• 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 3.5 pF)
• 100% Avalanche Tested
• RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ball.

The same part from a different manufacturer

Datasheet FQU1N60C - Fairchild Semiconductor FQU1N60C

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and .

Datasheet FQU1N60C - HAOHAI FQU1N60C

1.3A, 600V, N H FQU1N60C FQD1N60C H1N60U H1N60D 1N60 HAOHAI U: TO-251 D: TO-252 1N60 Series N-Channel MOS.

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