These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• 1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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D-PAK
FQD Series
I-PAK
G D S
FQU Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD1N50 / FQU1N50 500 1.1 0.7 4.4 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQU1N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
2 | FQU1N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
3 | FQU1N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
4 | FQU1N60 |
OuCan |
1.3A N-Channel MOSFET | |
5 | FQU1N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
6 | FQU1N60C |
HAOHAI |
N-Channel MOSFET | |
7 | FQU1N60C |
ON Semiconductor |
N-Channel MOSFET | |
8 | FQU1N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
9 | FQU10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
10 | FQU10N20 |
INCHANGE |
N-Channel MOSFET | |
11 | FQU10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
12 | FQU10N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |