These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are w.
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• 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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D-PAK
FQD Series
I-PAK
G D S
FQU Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD17N08 / FQU17N08 80 12.9 8.2 51.6 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQU17N08L |
Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET | |
2 | FQU17P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
3 | FQU10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
4 | FQU10N20 |
INCHANGE |
N-Channel MOSFET | |
5 | FQU10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
6 | FQU10N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
7 | FQU11P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
8 | FQU12N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
9 | FQU12N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
10 | FQU12P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET | |
11 | FQU13N06L |
Fairchild Semiconductor |
N-Channel QFET MOSFET | |
12 | FQU13N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET |