These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• 2.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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TO-220F
FQPF Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQPF5N80 800 2.8 1.77 11.2 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Vo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQPF5N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
2 | FQPF5N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
3 | FQPF5N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
4 | FQPF5N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
5 | FQPF5N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
6 | FQPF5N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
7 | FQPF5N50 |
Oucan Semi |
5A N-Channel MOSFET | |
8 | FQPF5N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
9 | FQPF5N50CF |
Fairchild Semiconductor |
Low gate charge | |
10 | FQPF5N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
11 | FQPF5N60 |
Oucan Semi |
5A N-Channel MOSFET | |
12 | FQPF5N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |