These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
• 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQPF5N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
2 | FQPF5N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
3 | FQPF5N50 |
Oucan Semi |
5A N-Channel MOSFET | |
4 | FQPF5N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
5 | FQPF5N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
6 | FQPF5N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
7 | FQPF5N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
8 | FQPF5N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
9 | FQPF5N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
10 | FQPF5N60 |
Oucan Semi |
5A N-Channel MOSFET | |
11 | FQPF5N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
12 | FQPF5N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |