These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• 70A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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TO-220
FQP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP70N08 80 70 49.5 280 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQP70N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
2 | FQP7N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
3 | FQP7N10L |
Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET | |
4 | FQP7N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | FQP7N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
6 | FQP7N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
7 | FQP7N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
8 | FQP7N60 |
OuCan |
7A N-Channel MOSFET | |
9 | FQP7N60C |
HAOHAI |
N-Channel MOSFET | |
10 | FQP7N65 |
Oucan Semi |
7A N-Channel MOSFET | |
11 | FQP7N65C |
Fairchild Semiconductor |
650V N-Channel MOSFET | |
12 | FQP7N70 |
Oucan Semi |
7A N-Channel MOSFET |