FQP7N65 - Oucan Semi

FQP7N65 7A N-Channel MOSFET

Product Summary The FQP7N65 & FQPF7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline pow.

Features

on B Derate above 25oC PD 192 38.5 1.5 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP7N65 65 0.5 FQPF7N65 65 -- Maximum Junction-to-Case RθJC
* Drain current limited by maximum junction temperature. 0.65 3.25 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 6 FQP7N65/FQPF7N65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Param.