Product Summary The FQP5N60 & FQPF5N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline pow.
5°C Power Dissipation B Derate above 25oC
PD
108 0.83
38 0.28
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
FQP5N60 65 0.5
FQPF5N60 65 --
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1.2
3.6
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Param.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar strip.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQP5N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
2 | FQP5N15 |
Fairchild Semiconductor |
N-CHANNEL MOSFET | |
3 | FQP5N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
4 | FQP5N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
5 | FQP5N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
6 | FQP5N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
7 | FQP5N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
8 | FQP5N50 |
Oucan Semi |
5A N-Channel MOSFET | |
9 | FQP5N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
10 | FQP5N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
11 | FQP5N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
12 | FQP50N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |