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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification FQP33N10 ·FEATURES ·Low RDS(on) ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for low voltage applications such as Audio amplifier,high efficiency switching DC/DC converters, and DC motor control. ·ABSOLUTE MAXIMUM RA.
·Low RDS(on)
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
·DESCRITION
·Designed especially for low voltage applications such as Audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100 V
VGS Gate-Source Voltage-Continuous
±25
V
ID Drain Current-Continuous
33 A
IDM Drain Current-Single Plused
132 A
PD Total Dissipation @TC=25℃
127 W
Tj Max. Operating Junction Temperature -55~175 ℃
Tstg Storage Temperature
-55~175 ℃
·THERMAL CHARACTE.
FQP33N10 - Fairchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar strip.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQP33N10L |
Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET |
|
| 2 | FQP30N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 3 | FQP30N06L |
Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET |
|
| 4 | FQP32N12V2 |
Fairchild Semiconductor |
120V N-Channel MOSFET |
|
| 5 | FQP32N20C |
Fairchild Semiconductor |
N-Channel QFET MOSFET |
|
| 6 | FQP34N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 7 | FQP34N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 8 | FQP3N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET |
|
| 9 | FQP3N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 10 | FQP3N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 11 | FQP3N50C |
ON Semiconductor |
500V N-Channel MOSFET |
|
| 12 | FQP3N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|