FQP3N50C - ON Semiconductor

FQP3N50C 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

Features

• 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V
• Low gate charge ( typical 10 nC )
• Low Crss ( typical 8.5 pF)
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode .