These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• -16.5A, -100V, RDS(on) = 0.19Ω @VGS = -10 V Low gate charge ( typical 30 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
D
D
G G S
D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB17P10 / FQI17P10 -100 -16.5 -11.7 -66 ± 30
(Note 2) (Note 1) (Note 1) (Note 3).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQI17P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
2 | FQI17N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
3 | FQI17N08L |
Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET | |
4 | FQI10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | FQI10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
6 | FQI10N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
7 | FQI10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
8 | FQI11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
9 | FQI11N40C |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
10 | FQI11P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
11 | FQI12N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
12 | FQI12N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |