FQI17P10 |
Part Number | FQI17P10 |
Manufacturer | Fairchild Semiconductor |
Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • -16.5A, -100V, RDS(on) = 0.19Ω @VGS = -10 V Low gate charge ( typical 30 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQB Series G D S I2-PAK FQI Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB17P10 / FQI17P10 -100 -16.5 -11.7 -66 ± 30 (Note 2) (Note 1) (Note 1) (Note 3)... |
Document |
FQI17P10 Data Sheet
PDF 676.48KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQI17P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
2 | FQI17N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
3 | FQI17N08L |
Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET | |
4 | FQI10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | FQI10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |