FQI16N25C - Fairchild Semiconductor

FQI16N25C N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.

Features

• 15.6A, 250V, RDS(on) = 0.27 Ω @VGS = 10 V
• Low gate charge ( typical 41nC)
• Low Crss ( typical 68pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC conver.