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FQI16N25C |
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| Part Number | FQI16N25C |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 15.6A, 250V, RDS(on) = 0.27 Ω @VGS = 10 V • Low gate charge ( typical 41nC) • Low Crss ( typical 68pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC conver... |
| Document |
 FQI16N25C Data Sheet
PDF 787.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQI16N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET |
|
| 2 | FQI16N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET |
|
| 3 | FQI10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 4 | FQI10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | FQI10N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|