These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well su.
•
•
•
•
•
• 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D D
!
"
G! G S
! "
" "
D-PAK
FQD Series
I-PAK
G D S
FQU Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD9N08 / FQU9N08 80 7.4 4.68 29.6 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar strip.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQD9N08L |
Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET | |
2 | FQD9N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
3 | FQD9N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
4 | FQD9N25 |
ON Semiconductor |
N-Channel MOSFET | |
5 | FQD10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
6 | FQD10N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
7 | FQD10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
8 | FQD10N20L |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FQD11P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
10 | FQD12N06 |
Oucan Semi |
60V N-Channel MOSFET | |
11 | FQD12N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
12 | FQD12N20L |
ON Semiconductor |
N-Channel MOSFET |