FQD12N20L - Fairchild Semiconductor

FQD12N20L N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power.

Features

• 9.0 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
• Low Gate Charge (Typ. 16 nC)
• Low Crss (Typ. 17 pF)
• 100% Avalanche Tested D D G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)
* Power Dissipation (TC = 25°C) -.