These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well su.
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• 12.9A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low Crss ( typical 29 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirements allowing direct operation from logic drives
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D-PAK
FQD Series
I-PAK
G D S
FQU Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD17N08L / FQU17N08L 80 12.9 8.2 51..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQD17N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
2 | FQD17P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
3 | FQD10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
4 | FQD10N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
5 | FQD10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
6 | FQD10N20L |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FQD11P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
8 | FQD12N06 |
Oucan Semi |
60V N-Channel MOSFET | |
9 | FQD12N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
10 | FQD12N20L |
ON Semiconductor |
N-Channel MOSFET | |
11 | FQD12N20L |
Fairchild Semiconductor |
N-Channel MOSFET | |
12 | FQD12N20LTM_F085 |
Fairchild Semiconductor |
200V Logic Level N-Channel MOSFET |