FMMT596 - Zetex Semiconductors

FMMT596 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – 596 7 FMMT596 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAME.

Features

MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz UNIT V V V A A mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio VBE(on) hFE -220 -200 -5 300 Transition Frequency Output Capacitance fT Cobo
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 143 FMMT596 TYPICAL CHARACTERISTICS 0.4 0.3 0.2 0.1 0 +25 ° C 0.4 0.3 0.2 0.1 0 I+/I
*=10 I+/I
*=10 I+/I
*=50 -55 °C +25 °C +100 °C 1mA 10mA 100mA 1A 1mA 10mA 100mA 1A IC-C.