FMMT591Q - Diodes

FMMT591Q PNP MEDIUM POWER TRANSISTOR

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > -60V  IC = -1A High Continuous Collector Current  ICM = -2A Peak Pulse Current  RSAT = 295mΩ for a Low Equivalent On-Resistance  hFE characterized up to -2A for high current gain hold up  Complementary NPN Type: FMMT.

Features

 BVCEO > -60V
 IC = -1A High Continuous Collector Current
 ICM = -2A Peak Pulse Current
 RSAT = 295mΩ for a Low Equivalent On-Resistance
 hFE characterized up to -2A for high current gain hold up
 Complementary NPN Type: FMMT491Q
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
 PPAP Capable (Note 4) A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Mechanical Data
 Case: SOT23
 Case Material: molded plastic, “Green” Molding Compoun.