FMBM5401 PNP General Purpose Amplifier FMBM5401 PNP General Purpose Amplifier • This device has matched dies in SuperSOT-6. C2 E1 www.DataSheet4U.com C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .4S2 Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, TSTG Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are s.
tage
* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
Conditions
IC = -1.0mA, IB = 0 IC = -100µA, IE = 0 IC = -10µA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, Ta = 100°C VEB = -3.0V, IC = 0 VCE = -5V, IC = -1mA hFE1(Die1)/hFE1(Die2) VCE = -5V, IC = -10mA hFE2(Die1)/hFE2(Die2) VCE = -5V, IC = -50mA hFE3(Die1)/hFE3(Die2)
Min.
-150 -160 -5.0
Max
Units
V V V
-50 -50 -50
nA µA nA
On Characteristics
* DC Current Gain Variation Ratio of hFE1 Between Die 1 and Die 2 DC Current Gain Variation Ratio of hFE2 Between Die 1 and .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FMBM5551 |
Fairchild Semiconductor |
NPN General Purpose Amplifier | |
2 | FMB-22H |
Sanken electric |
Schottky Barrier Diodes 20V | |
3 | FMB-22L |
Sanken electric |
Schottky Barrier Diodes 20V | |
4 | FMB-2306 |
Sanken electric |
Schottky Diode | |
5 | FMB-24 |
Sanken electric |
Silicon Schottky Barrier Diode | |
6 | FMB-24H |
Sanken electric |
Silicon Schottky Barrier Diode | |
7 | FMB-24L |
Sanken electric |
Silicon Schottky Barrier Diode | |
8 | FMB-24M |
Sanken electric |
SILICON SCHOTTKY BARRIER DIODE | |
9 | FMB-26 |
Sanken electric |
Schottky Barrier Diodes 60V | |
10 | FMB-26L |
Sanken electric |
Schottky Barrier Diodes 60V | |
11 | FMB-29 |
Sanken electric |
Schottky Barrier Diodes 90V | |
12 | FMB-29L |
Sanken electric |
Schottky Barrier Diodes |