FMBL1G200US60 - Fairchild Semiconductor

FMBL1G200US60 Molding Type Module

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • UL Certified No. E209.

Features

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• UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 200A High input impedance Fast & soft anti-parallel FWD Package Code : 7PM-BB E1/C2 Application C1 E2
• Boost (Step Up) Converter G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maxim.