FM28V202A - Cypress Semiconductor

FM28V202A 2-Mbit (128 K x 16) F-RAM Memory

FM28V202A 2-Mbit (128 K × 16) F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features ■ 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page.

Features

■ 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16
❐ Configurable as 256 K × 8 using UB and LB
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (see the Data Retention and Endurance table)
❐ NoDelay™ writes
❐ Page mode operation to 30-ns cycle time
❐ Advanced high-reliability ferroelectric process
■ SRAM compatible
❐ Industry-standard 128 K × 16 SRAM pinout
❐ 60-ns access time, 90-ns cycle time
■ Advanced features
❐ Software-programmable block write-protect
■ Superior to battery-backed SRAM modules
❐ No battery concerns
❐ Monolithic .