The FM25L256B is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other no.
256K bit Ferroelectric Nonvolatile RAM
• Organized as 32,768 x 8 bits
• Unlimited Read/Write Cycles
• 45 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI
• Up to 20 MHz Frequency
• Direct Hardware Replacement for EEPROM
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme
• Hardware Protection
• Software Protection Low Power Consumption
• Low Voltage Operation 2.7V
– 3.6V Industry Standard Configurations
• Industrial Temperature -40°C to +85°C
• 8-pin SOIC and 8-pin TDFN Packages
• “Green”/RoHS Packag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FM25L256 |
Ramtron |
3V F-RAM Memory | |
2 | FM25L04B |
Cypress Semiconductor |
4-Kbit (512 x 8) Serial (SPI) F-RAM | |
3 | FM25L04B |
Ramtron |
3V F-RAM Memory | |
4 | FM25L16 |
Ramtron |
3V F-RAM Memory | |
5 | FM25L16B |
Cypress Semiconductor |
16-Kbit (2K x 8) Serial (SPI) F-RAM | |
6 | FM25L16B |
Ramtron |
3V F-RAM Memory | |
7 | FM25L512 |
Ramtron |
3V F-RAM Memory | |
8 | FM250 |
Formosa MS |
Schottky Barrier Diodes | |
9 | FM250 |
Rectron Semiconductor |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
10 | FM250-BS |
Formosa MS |
Chip Schottky Barrier Rectifier | |
11 | FM250-C |
Formosa MS |
(FM2xx-C) Chip Schottky Barrier Diodes | |
12 | FM250-M |
Formosa MS |
Chip Schottky Barrier Rectifier |