FM25L04B 4-Kbit (512 × 8) Serial (SPI) F-RAM 4-Kbit (512 × 8) Serial (SPI) F-RAM Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric proces.
■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See the Data Retention and Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Very fast serial peripheral interface (SPI)
❐ Up to 20 MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ So.
The FM25L04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random acces.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FM25L16 |
Ramtron |
3V F-RAM Memory | |
2 | FM25L16B |
Cypress Semiconductor |
16-Kbit (2K x 8) Serial (SPI) F-RAM | |
3 | FM25L16B |
Ramtron |
3V F-RAM Memory | |
4 | FM25L256 |
Ramtron |
3V F-RAM Memory | |
5 | FM25L256B |
Ramtron |
3V F-RAM Memory | |
6 | FM25L512 |
Ramtron |
3V F-RAM Memory | |
7 | FM250 |
Formosa MS |
Schottky Barrier Diodes | |
8 | FM250 |
Rectron Semiconductor |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
9 | FM250-BS |
Formosa MS |
Chip Schottky Barrier Rectifier | |
10 | FM250-C |
Formosa MS |
(FM2xx-C) Chip Schottky Barrier Diodes | |
11 | FM250-M |
Formosa MS |
Chip Schottky Barrier Rectifier | |
12 | FM250-MS |
Formosa MS |
SMD Schottky Barrier Rectifier |