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FM25L04B - Cypress Semiconductor

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FM25L04B 4-Kbit (512 x 8) Serial (SPI) F-RAM

FM25L04B 4-Kbit (512 × 8) Serial (SPI) F-RAM 4-Kbit (512 × 8) Serial (SPI) F-RAM Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric proces.

Features


■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8
❐ High-endurance 100 trillion (1014) read/writes
❐ 151-year data retention (See the Data Retention and Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Very fast serial peripheral interface (SPI)
❐ Up to 20 MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ So.

The same part from a different manufacturer

Datasheet FM25L04B - Ramtron FM25L04B

The FM25L04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random acces.

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