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The FM24CL04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvo.
4K bit Ferroelectric Nonvolatile RAM
• Organized as 512 x 8 bits
• High Endurance 1014 Read/Writes
• 38 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface
• Up to 1 MHz maximum bus frequency
• Direct hardware replacement for EEPROM
• Supports legacy timing for 100 kHz & 400 kHz Low Power Operation
• 2.7V to 3.65V operation
• 100 µA Active Current (100 kHz)
• 3 µA (typ.) Standby Current Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 8-pin “Green”/RoHS SOIC (-G)
Description
The FM24CL04B is a 4-kilo.
FM24CL04B - Cypress Semiconductor
The FM24CL04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random acc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FM24CL04 |
ETC |
4Kb FRAM Serial Memory |
|
| 2 | FM24CL16 |
ETC |
16Kb FRAM Serial 3V Memory |
|
| 3 | FM24CL16B |
Cypress Semiconductor |
16-Kbit (2K x 8) Serial (I2C) F-RAM |
|
| 4 | FM24CL16B |
Ramtron |
16Kb Serial 3V F-RAM Memory |
|
| 5 | FM24CL64 |
ETC |
64Kb 2.7V-3.6V FRAM Serial Memory |
|
| 6 | FM24CL64B |
Cypress Semiconductor |
64-Kbit (8K x 8) Serial (I2C) F-RAM |
|
| 7 | FM24CL64B |
Ramtron |
64Kb Serial 3V F-RAM Memory |
|
| 8 | FM24C02 |
Fudan |
2-Wire Serial EEPROM |
|
| 9 | FM24C02A |
Fudan |
2-Wire Serial EEPROM |
|
| 10 | FM24C02B |
Fudan |
2-Wire Serial EEPROM |
|
| 11 | FM24C02C |
Fudan |
2-Wire Serial EEPROM |
|
| 12 | FM24C02U |
Fairchild Semiconductor |
2K-Bit Standard 2-Wire Bus Interface Serial EEPROM |
|