The FM24CL04 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvol.
4K bit Ferroelectric Nonvolatile RAM
• Organized as 512 x 8 bits
• Unlimited Read/Writes
• 10 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface
• Up to 1 MHz maximum bus frequency
• Direct hardware replacement for EEPROM Low Power Operation
• 2.7V to 3.65V operation
• 75 µA Active Current (100 kHz) @ 3V
• 1 µA Standby Current Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 8-pin SOIC
Description
The FM24CL04 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelec.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FM24CL04B |
Cypress Semiconductor |
4-Kbit (512 x 8) Serial (I2C) F-RAM | |
2 | FM24CL04B |
Ramtron |
4Kb Serial 3V F-RAM Memory | |
3 | FM24CL16 |
ETC |
16Kb FRAM Serial 3V Memory | |
4 | FM24CL16B |
Cypress Semiconductor |
16-Kbit (2K x 8) Serial (I2C) F-RAM | |
5 | FM24CL16B |
Ramtron |
16Kb Serial 3V F-RAM Memory | |
6 | FM24CL64 |
ETC |
64Kb 2.7V-3.6V FRAM Serial Memory | |
7 | FM24CL64B |
Cypress Semiconductor |
64-Kbit (8K x 8) Serial (I2C) F-RAM | |
8 | FM24CL64B |
Ramtron |
64Kb Serial 3V F-RAM Memory | |
9 | FM24C02 |
Fudan |
2-Wire Serial EEPROM | |
10 | FM24C02A |
Fudan |
2-Wire Serial EEPROM | |
11 | FM24C02B |
Fudan |
2-Wire Serial EEPROM | |
12 | FM24C02C |
Fudan |
2-Wire Serial EEPROM |