MITSUBISHI
)GUP
(2)SVP (8)GVP
4
(3)SWP
(4)SUN
(5)SVN
L A B E L
75
67
80
90
(6)SWN
(9)GWP (10)GUN (11)GVN (12)GWN
A B
(13)TH1 (14)TH2
May 2006
MITSUBISHI
*1 ISM
*1 PD
*4 PD
*4 Tch Tstg Viso — — Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mounting torque Weight Conditions G-S Short D-S Short TC’ =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FM200TU-2A |
Mitsubishi Electric |
HIGH POWER SWITCHING USE INSULATED PACKAGE | |
2 | FM200TU-3A |
Mitsubishi Electric |
HIGH POWER SWITCHING USE INSULATED PACKAGE | |
3 | FM200 |
TE |
High Voltage DC Contactors | |
4 | FM200ABXYX |
TE |
High Voltage DC Contactors | |
5 | FM200CD1D5B |
KEC |
2-PACK MOSFET MODULE | |
6 | FM200HB1D5B |
KEC |
2-PACK MOSFET MODULE | |
7 | FM20 |
Fairchild Semiconductor |
Ultra-Low-Power Analog Temperature Sensor | |
8 | FM201 |
Formosa MS |
Glass passivated type | |
9 | FM201A |
Rectron |
GLASS PASSIVATED SILICON RECTIFIER | |
10 | FM201G |
American First Semiconductor |
(FM201G - FM207G) 2.0A Surface Mount General Purpose Rectifiers | |
11 | FM202 |
Formosa MS |
Glass passivated type | |
12 | FM202 |
FEC Semiconductor |
2.0A Surface Mount Schottky Rectifier |