SEMICONDUCTOR TECHNICAL DATA 150V / 200A 2-PACK MOSFET MODULE (Common-Drain) FEATURES Low RDS(on) High frequency operation dv/dt ruggedness Fast switching APPLICATION Battery Management System Electric Vehicle FM200CD1D5B INTERNAL CIRCUIT 1 2 6 7 3 5 4 1. D1D2 2. S2 3. S1 4. G1 5. S1 6. G2 7. S2 OUTLINE DRAWING 13+_ 0.3 13+_ 0.3 13+_ 0.3 14 _+ 0.3 .
Low RDS(on) High frequency operation dv/dt ruggedness Fast switching APPLICATION Battery Management System Electric Vehicle FM200CD1D5B INTERNAL CIRCUIT 1 2 6 7 3 5 4 1. D1D2 2. S2 3. S1 4. G1 5. S1 6. G2 7. S2 OUTLINE DRAWING 13+_ 0.3 13+_ 0.3 13+_ 0.3 14 _+ 0.3 1 23 23+_ 0.3 23+_ 0.3 80+_ 0.5 93+_ 0.5 6 7 5 4 17+_ 0.3 Unit : mm 17 _+0.3 25 _+0.3 28 _+0.5 35 _+0.5 6 _+0.5 30 _+0.5 31 _+0.5 30 _+ 0.5 22 _+ 0.5 MAXIMUM RATING (@Tc=25 Per Leg, Unless otherwise noted) CHARACTERISTIC Drain-to-Source Breakdown Voltage Gate to Source Voltage Continuous Drain Current Pulsed D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FM200 |
TE |
High Voltage DC Contactors | |
2 | FM200ABXYX |
TE |
High Voltage DC Contactors | |
3 | FM200HB1D5B |
KEC |
2-PACK MOSFET MODULE | |
4 | FM200TU-07A |
Mitsubishi Electric |
HIGH POWER SWITCHING USE INSULATED PACKAGE | |
5 | FM200TU-2A |
Mitsubishi Electric |
HIGH POWER SWITCHING USE INSULATED PACKAGE | |
6 | FM200TU-3A |
Mitsubishi Electric |
HIGH POWER SWITCHING USE INSULATED PACKAGE | |
7 | FM20 |
Fairchild Semiconductor |
Ultra-Low-Power Analog Temperature Sensor | |
8 | FM201 |
Formosa MS |
Glass passivated type | |
9 | FM201A |
Rectron |
GLASS PASSIVATED SILICON RECTIFIER | |
10 | FM201G |
American First Semiconductor |
(FM201G - FM207G) 2.0A Surface Mount General Purpose Rectifiers | |
11 | FM202 |
Formosa MS |
Glass passivated type | |
12 | FM202 |
FEC Semiconductor |
2.0A Surface Mount Schottky Rectifier |