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FM120-N THRU FM1100-N CHIP SCHOTTKY BARRIER RECTIFIER 1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V SOD-323 0.106 (2.7) 0.091 (2.3) 0.012(0.3) Typ. 0.057 (1.45) 0.041 (1.05) 0.047 (1.2) 0.031 (0.8) 0.016(0.4) Typ. 0.016(0.4) Typ. FEATURES • Batch process design, excellent power dissipation offers • • • • • • • • • better reverse leakage curr.
• Batch process design, excellent power dissipation offers
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better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Very tiny plastic SMD package. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228
MECHANICAL DATA
• Epoxy : UL94-V0 rated flame retardant
• Case : Mo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FM180-M |
Formosa MS |
Silicon epitaxial planer type |
|
| 2 | FM180-MH |
Formosa MS |
Chip Schottky Barrier Diodes |
|
| 3 | FM180-MS |
Formosa MS |
SMD Schottky Barrier Rectifier |
|
| 4 | FM180-S |
Formosa MS |
Chip Schottky Barrier Diodes |
|
| 5 | FM180 |
Rectron |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 6 | FM180 |
Formosa MS |
Silicon epitaxial planer type |
|
| 7 | FM1800 |
FUMAN |
Constant current constant voltage IC |
|
| 8 | FM1801 |
FUMAN |
Constant current constant voltage |
|
| 9 | FM1808B |
Cypress Semiconductor |
256-Kbit (32 K x 8) Bytewide F-RAM Memory |
|
| 10 | FM1808B |
Ramtron |
256Kb Bytewide 5V F-RAM Memory |
|
| 11 | FM18L08 |
ETC |
256Kb 2.7-3.6V Bytewide FRAM Memory |
|
| 12 | FM18L08-70-P |
ETC |
256Kb 2.7-3.6V Bytewide FRAM Memory |
|