Chip Schottky Barrier Diodes FM120-M THRU FM1100-M Silicon epitaxial planer type Formosa MS SOD-123 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 /.
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.063(1.6) 0.055(1.4) 0.071(1.8) 0.055(1.4) 0.110(2.8) 0.094(2.4) 0.035(0.9) Typ. 0.035(0.9) Typ. Dimensions in inches and (millimeters) Mechanical data Case : Molded plastic, JEDE C SOD-123 / MI NI SMA Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.04 gram MAXIM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FM180-MH |
Formosa MS |
Chip Schottky Barrier Diodes | |
2 | FM180-MS |
Formosa MS |
SMD Schottky Barrier Rectifier | |
3 | FM180-N |
PACELEADER INDUSTRIAL |
Chip Schottky Barrier Rectifier | |
4 | FM180-S |
Formosa MS |
Chip Schottky Barrier Diodes | |
5 | FM180 |
Rectron |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
6 | FM180 |
Formosa MS |
Silicon epitaxial planer type | |
7 | FM1800 |
FUMAN |
Constant current constant voltage IC | |
8 | FM1801 |
FUMAN |
Constant current constant voltage | |
9 | FM1808B |
Cypress Semiconductor |
256-Kbit (32 K x 8) Bytewide F-RAM Memory | |
10 | FM1808B |
Ramtron |
256Kb Bytewide 5V F-RAM Memory | |
11 | FM18L08 |
ETC |
256Kb 2.7-3.6V Bytewide FRAM Memory | |
12 | FM18L08-70-P |
ETC |
256Kb 2.7-3.6V Bytewide FRAM Memory |