FJAF6815 - Fairchild Semiconductor

FJAF6815 NPN Triple Diffused Planar Silicon Transistor

FJAF6815 FJAF6815 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1500V • Low Saturation Voltage : VCE(sat) = 3V (Max.) • For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEB.

Features

oltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=10A IC=10A, IB=2.5A IC=10A, IB=2.5A VCC=200V, IC=8A, RL=25Ω IB1=1.6A, IB2= - 3.2A 1500 750 6 10 5 8 3 1.5 3 0.2 V V µs µs Min Typ Max 1 10 1 Units mA µA mA V V V
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case Typ Max 2.08 Units °C/W ©2001 Fai.