FGH60N60SMD - ON Semiconductor

FGH60N60SMD IGBT

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for easy Para.

Features

• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
• High Input Impedance
• Fast Switching: EOFF = 7.5 uJ/A
• Tightened Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS www.onsemi.com VCES 600 V IC 60 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH60N60 SMD © Semiconductor Components Industries, LLC, 2010 January, 2020 − Rev. 3 .