FGH60N60SMD-F085 - ON Semiconductor

FGH60N60SMD-F085 IGBT

Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for easy Parall.

Features

• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A
• High Input Impedance
• Tightened Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant
• Qualified to Automotive Requirements of AEC−Q101 Applications
• Automotive Chargers, Converters, High Voltage Auxiliaries
• Solar Inverters, UPS, SMPS, PFC www.onsemi.com VCES 600 V IC 60 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH60N60 SMD © Semicondu.