Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for hig.
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Formerly Developmental Type TA49367.
Package
TO-247
E C G
Symbol
C
TO-220AB
E C G
TO-263AB
G
G E
COLLECTOR (Back-Metal)
COLLECTOR (Flange)
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol BVCES IC25 IC110 ICM VGES VG.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGH30N6S2D |
Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT |
|
| 2 | FGH30N60LSD |
Fairchild Semiconductor |
IGBT |
|
| 3 | FGH30N60LSD |
ON Semiconductor |
PT IGBT |
|
| 4 | FGH30N120FTD |
Fairchild Semiconductor |
Trench IGBT |
|
| 5 | FGH30S130P |
Fairchild Semiconductor |
IGBT |
|
| 6 | FGH30S130P |
ON Semiconductor |
IGBT |
|
| 7 | FGH30S150P |
ON Semiconductor |
IGBT |
|
| 8 | FGH30S150P |
Fairchild Semiconductor |
IGBT |
|
| 9 | FGH30T65UPDT |
Fairchild Semiconductor |
IGBT |
|
| 10 | FGH12040WD |
ON Semiconductor |
IGBT |
|
| 11 | FGH15T120SMD |
ON Semiconductor |
IGBT |
|
| 12 | FGH15T120SMD |
Fairchild Semiconductor |
15 A Field Stop Trench IGBT |
|