Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ =175°C • Positive Temperature Co−efficient for Easy Parallel Operating • Low Saturation Voltage: VCE.
• Maximum Junction Temperature: TJ =175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• Low Saturation Voltage: VCE(sat) = 2.3 V (Typ.) @ IC = 40 A
• 100% of the Parts Tested for ILM (Note 1)
• Short Circuit Ruggedness > 5 us @ 150°C
• High Input Impedance
• This Device is Pb−Free and is RoHS Compliant
Applications
• Only for Welder
www.onsemi.com C
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TO−247 long leads CASE 340CH
MARKING DIAGRAM $Y&Z&3&K FGH12040 WD
© Semiconductor Components Industries, LLC, 2014
April, 2020 − Rev. 4
$Y &Z &3 &K FGH12040WD
= ON Semiconductor Logo = Assembly Plant Code = Numeric.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FGH15T120SMD |
ON Semiconductor |
IGBT | |
2 | FGH15T120SMD |
Fairchild Semiconductor |
15 A Field Stop Trench IGBT | |
3 | FGH20N60SFD |
Fairchild Semiconductor |
20A Field Stop IGBT | |
4 | FGH20N60SFDTU |
ON Semiconductor |
IGBT | |
5 | FGH20N60SFDTU-F085 |
ON Semiconductor |
IGBT | |
6 | FGH20N60SFDTU_F085 |
Fairchild Semiconductor |
20A Field Stop IGBT | |
7 | FGH20N60UFD |
Fairchild Semiconductor |
20A Field Stop IGBT | |
8 | FGH20N60UFD |
ON Semiconductor |
IGBT | |
9 | FGH20N6S2 |
Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT | |
10 | FGH20N6S2D |
Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT | |
11 | FGH25N120FTDS |
Fairchild Semiconductor |
IGBT | |
12 | FGH25N120FTDS |
ON Semiconductor |
IGBT |