SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions Absolute Max.
• Max Junction Temperature 175 oC
• Avalanche Rated 180 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
July 2016
Description
SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust oper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FFSP05120A |
ON Semiconductor |
Silicon Carbide Schottky Diode | |
2 | FFSP0665A |
ON Semiconductor |
Silicon Carbide Schottky Diode | |
3 | FFSP08120A |
ON Semiconductor |
Silicon Carbide Schottky Diode | |
4 | FFSP0865A |
ON Semiconductor |
Silicon Carbide Schottky Diode | |
5 | FFSP10120A |
ON Semiconductor |
Silicon Carbide Schottky Diode | |
6 | FFSP1265A |
ON Semiconductor |
SiC Schottky Diode | |
7 | FFSP15120A |
ON Semiconductor |
Silicon Carbide Schottky Diode | |
8 | FFSP20120A |
ON Semiconductor |
Silicon Carbide Schottky Diode | |
9 | FFSP2065A |
ON Semiconductor |
Silicon Carbide Schottky Diode | |
10 | FFSP2065B |
ON Semiconductor |
Silicon Carbide Schottky Diode | |
11 | FFSP2065BDN-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode | |
12 | FFSPF0865A |
ON Semiconductor |
SiC Schottky Diode |