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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits inc.
• Max Junction Temperature 175°C
• Avalanche Rated 72 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
DATA SHEET www.onsemi.com
1. Cathode 2. Anode Schottky Diode
1 2 TO−220−2LD CASE 340BB
MARKING DIAGRAM
AXYYKK FFSP 1265A
A XYY KK FFSP1265A
= Assembly Plant Code = Date Code (Year & Week) = Lot Traceability Code = Specific Device Code
ORDERING INFORMATION
S.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FFSP10120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 2 | FFSP15120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 3 | FFSP05120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 4 | FFSP0665A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 5 | FFSP08120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 6 | FFSP0865A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 7 | FFSP20120A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 8 | FFSP2065A |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 9 | FFSP2065B |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 10 | FFSP2065BDN-F085 |
ON Semiconductor |
Silicon Carbide Schottky Diode |
|
| 11 | FFSP3065A |
Fairchild Semiconductor |
Silicon Carbide Schottky Diode |
|
| 12 | FFSPF0865A |
ON Semiconductor |
SiC Schottky Diode |
|