FDW2508PB - Fairchild Semiconductor

FDW2508PB Dual P-Channel MOSFET

This P-Channel –1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®. It has been optimized for battery power management applications. „ Max rDS(on) = 18mΩ at VGS = –4.5V, ID = –6A „ Max rDS(on) = 22mΩ at VGS = –2.5V, ID = –5A „ Max rDS(on) = 30mΩ at VGS = –1.8V, ID = –4A „ Low gate charge „ High performance trench technolog.

Features

General Description This P-Channel
  –1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®. It has been optimized for battery power management applications. „ Max rDS(on) = 18mΩ at VGS =
  –4.5V, ID =
  –6A „ Max rDS(on) = 22mΩ at VGS =
  –2.5V, ID =
  –5A „ Max rDS(on) = 30mΩ at VGS =
  –1.8V, ID =
  –4A „ Low gate charge „ High performance trench technology for extremely low rDS(on) „ Low profile TSSOP-8 package „ RoHS compliant Application „ Power management „ Load switch „ Battery protection www.DataSheet4U.com TSSOP8 Pin 1 MOSFET Maximum Ratings TA = 25°C unless o.